Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 251, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2022.112138
Keywords
GaAs; Si photoelectrode; Dual bandgap; Light absorption; III -V semiconductors on silicon; Photoelectrochemistry
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In this study, we investigated the performance of unprotected epitaxial GaAs/Si photoelectrodes during photocorrosion using structural, optical, and photoelectrochemical characterizations. We found that photoanodes consisting of a 1 μm thick GaAs epitaxially grown thin film on a low-cost Si substrate exhibited higher photocurrent than expensive commercial GaAs wafers. Through photoelectrochemical experiments under monochromatic excitation, we attributed the improved photocurrent to the dual-bandgap operation of the GaAs/Si photoelectrode, benefiting from both GaAs and Si photo-generated carriers. This finding opens up new possibilities for designing efficient and low-cost dual-bandgap photoelectrodes.
The development of high-efficiency photoelectrodes at low manufacturing cost is of great interest for the production of renewable and green hydrogen through solar-driven water splitting. In this work, we use structural, optical, and photoelectrochemical characterizations to study the performance of unprotected epitaxial GaAs/Si photoelectrodes during photocorrosion. More specifically, we demonstrate that photoanodes including 1-mu m thick GaAs epitaxially grown thin film on a low-cost Si substrate can produce a higher photocurrent than those measured for expensive commercial GaAs wafers. Based on photoelectrochemical experiments under monochromatic excitation, we show that the improved photocurrent has to be related to the dual-bandgap operation of the GaAs/Si photoelectrode, benefiting from both GaAs and Si photo-generated carriers. This result opens new possibilities to further design efficient and low-cost dual-bandgap photoelectrodes.
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