Broadband Polarization-Sensitive Photodetection of Magnetic Semiconducting MnTe Nanoribbons

2D materials with low symmetry are explored in recent years because of their anisotropic advantage in polarization-sensitive photodetection. Herein the controllably grown hexagonal magnetic semiconducting alpha-MnTe nanoribbons are reported with a highly anisotropic (100) surface and their high sensitivity to polarization in a broadband photodetection, whereas the hexagonal structure is highly symmetric. The outstanding photoresponse of alpha-MnTe nanoribbons occurs in a broadband range from ultraviolet (UV, 360 nm) to near infrared (NIR, 914 nm) with short response times of 46 ms (rise) and 37 ms (fall), excellent environmental stability, and repeatability. Furthermore, due to highly anisotropic (100) surface, the alpha-MnTe nanoribbons as photodetector exhibit attractive sensitivity to polarization and high dichroic ratios of up to 2.8 under light illumination of UV-to-NIR wavelengths. These results demonstrate that 2D magnetic semiconducting alpha-MnTe nanoribbons provide a promising platform to design the next-generation polarization-sensitive photodetectors in a broadband range.

Automated summary

Controllably grown hexagonal magnetic semiconducting alpha-MnTe nanoribbons with a highly anisotropic (100) surface exhibit outstanding photoresponse in a broadband range from ultraviolet to near infrared, along with short response times, excellent stability, and high sensitivity to polarization. These results demonstrate the promising potential of 2D alpha-MnTe nanoribbons as a platform for designing next-generation polarization-sensitive photodetectors.