Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 38, Issue 6, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6641/accd13
Keywords
DUV-LED; current crowding; localized emission; self-heating; efficiency droop
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The low electrical conductivity of p-type contact layer is the main reason for the current crowding issue in AlGaN-based deep-ultraviolet light-emitting-diodes (DUV-LEDs), hindering their prosperity. Understanding the current distribution in p-AlGaN is crucial for the rational design of advanced device architectures. This study deposited a fish-bone-shaped p-type electrode on a 280 nm AlGaN DUV-LED to investigate localized emissions. It was found that a significantly raised junction temperature, attributed to high localized current density, caused efficiency droop in DUV-LEDs with fish-bone-shaped p-type electrodes.
Current crowding is the main bottleneck preventing the prosperity of AlGaN-based deep-ultraviolet light-emitting-diodes (DUV-LEDs) considering the low electrical conductivity of p-type contact layer. A deeper understanding of the current distribution in p-AlGaN is critical, which enables the rational design of advanced device architectures. In this work, a fish-bone-shaped p-type electrode was deposited on top of a 280 nm AlGaN DUV-LED for investigation of localized emissions. A significantly raised junction temperature was identified, causing efficiency droop in DUV-LEDs under relatively low injection current with fish-bone-shaped p-type electrodes. High junction temperature is attributed to the significantly high localized current density which is confirmed by the spatial-resolved electroluminescence spectra and theoretical simulation. The crowding current level beneath the p-electrodes is estimated to be several times higher than that in between the electrodes.
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