Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al0.33Ga0.67As heterostructure

We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al0.33Ga0.67As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed in this region. Controlled electroluminescence from both of the p-n junctions has been demonstrated by varying the applied bias voltages. An emission peak with a width of similar to 8

Automated summary

We have fabricated a device with two lateral p-n junctions on an n-type GaAs/Al0.33Ga0.67As heterostructure. The n-type material was converted to p-type by removing dopants and applying a voltage to a gate in this region. Controlled electroluminescence from both p-n junctions was demonstrated by varying the applied bias voltages. The emitted spectrum peak width was approximately 8 units.