Metal doped polyaniline as neuromorphic circuit elements for in-materia computing

Polyaniline-based atomic switches are material building blocks whose nanoscale structure and resultant neuromorphic character provide a new physical substrate for the development next-generation, nanoarchitectonic-enabled computing systems. Metal ion-doped devices consisting of a Ag/metal ion doped polyaniline/Pt sandwich structure were fabricated using an in situ wet process. The devices exhibited repeatable resistive switching between high (ON) and low (OFF) conductance states in both Ag+ and Cu2+ ion-doped devices. The threshold voltage for switching was>0.8 V and average ON/OFF conductance ratios (30 cycles for 3 samples) were 13 and 16 for Ag+ and Cu2+ devices, respectively. The ON state duration was determined by the decay to an OFF state after pulsed voltages of differing amplitude and frequency. The switching behaviour is analagous to short-term (STM) and long-term (LTM) memories of biological synapses. Memristive behaviour and evidence of quantized conductance were also observed and interpreted in terms of metal filament formation bridging the metal doped polymer layer. The successful realization of these properties within physical material systems indicate polyaniline frameworks as suitable neuromorphic substrates for in materia computing.

Automated summary

Polyaniline-based atomic switches, with their nanoscale structure and neuromorphic character, provide a new physical substrate for next-generation nanoarchitectonic-enabled computing systems. Metal ion-doped devices consisting of Ag/metal ion-doped polyaniline/Pt sandwich structures were fabricated and exhibited repeatable resistive switching. The successful realization of properties such as memristive behavior and quantized conductance suggest that polyaniline frameworks are suitable neuromorphic substrates for in materia computing.