Two-photon absorption spectrometers for near infrared

We present a Silicon-based Charge-Coupled Device (Si-CCD) sensor applied as a cost-effective spectrometer for femtosecond pulse characterization in the Near Infrared region in two different configurations: two-Fourier and Czerny-Turner setups. To test the spectrometer's performance, a femtosecond Optical Parametric Oscillator with a tuning range between 1100 and 1700 nm and a femtosecond Erbium-Doped Fiber Amplifier at 1582 nm were employed. The nonlinear spectrometer operation is based on the Two-Photon Absorption effect generated in the Si-CCD sensor. The achieved spectrometer resolution was 0.6 +/- 0.1 nm with a threshold peak intensity of 2 x 10(6) W/cm(2). An analysis of the nonlinear response as a function of the wavelength, the response saturation, and the criteria to prevent it are also presented.

Automated summary

We have developed a cost-effective spectrometer for femtosecond pulse characterization in the Near Infrared region using a Silicon-based Charge-Coupled Device (Si-CCD) sensor in two different configurations. The spectrometer achieved a resolution of 0.6 +/- 0.1 nm and a threshold peak intensity of 2 x 10(6) W/cm(2) using the Two-Photon Absorption effect in the Si-CCD sensor. We also analyzed the nonlinear response of the spectrometer and presented criteria to prevent response saturation.