Journal
PLASMA SCIENCE & TECHNOLOGY
Volume 25, Issue 10, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/2058-6272/acd588
Keywords
InGaSnO; Cl-2-based plasma; etching mechanism; surface modification; plasma etching
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In this study, the etching characteristics of indium gallium tin oxide (IGTO) thin films were investigated using Cl-2/Ar plasma. The results showed that the etch rate increased with an increase in Cl-2 proportion and radio-frequency power, with the highest etch rate observed in pure Cl-2 plasma. The etching process in Cl-2-containing plasma reduced surface roughness, while the etching process in pure Ar plasma increased surface roughness.
Indium gallium tin oxide (IGTO) thin films have the potential for high mobility and low-temperature processing, which makes them suitable for applications such as display backplanes and high-voltage switching devices. However, very few studies have investigated the plasma-etching characteristics of IGTO and changes in its properties after etching. In this study, the etching characteristics of IGTO were investigated using Cl-2/Ar plasma, and changes in surface properties were analyzed. Results showed that the etch rate increased with an increase in the proportion of Cl-2, with the highest etch rate observed at 69 nm min(-1) in pure Cl-2 plasma with a gas flow rate of 100 sccm. Furthermore, increased radio-frequency power caused a rise in the etch rate, while a process pressure of 15 mTorr was optimal. The primary etching mechanism for IGTO thin films under Cl-2 plasma was a chemical reaction, and an increased work function indicated the occurrence of defects on the surface. In addition, the etching process reduced the surface roughness of Cl-2-containing plasma, whereas the etching process in pure Ar plasma increased surface roughness. This study contributes to a better understanding of the plasma-etching characteristics of IGTO and changes in its properties after etching, providing valuable insights for IGTO-based applications.
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