Low-temperature atmospheric pressure plasma conversion of polydimethylsiloxane and polysilazane precursor layers to oxide thin films

We study the conversion of two polymeric silicon precursor compound layers (perhydropolysilazane and polydimethylsiloxane) on a silicon wafer and polyethylene terephthalate substrates to silicon oxide thin films using a pulsed atmospheric pressure plasma jet. Varying the scan velocity and the number of treatments results in various film compositions, as determined by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The mechanism suggested for the conversion process includes the decomposition of the precursor triggered by plasma-produced species, the oxidation of the surface, and finally, the diffusion of oxygen into the film, while gases produced during the precursor decomposition diffuse out of the film. The latter process is possibly facilitated by local plasma heating of the surface. The precursor conversion appears to depend sensitively on the balance between the different contributions to the conversion mechanism.

Automated summary

This study investigates the conversion of two polymeric silicon precursor compound layers (perhydropolysilazane and polydimethylsiloxane) to silicon oxide thin films on a silicon wafer and polyethylene terephthalate substrates using a pulsed atmospheric pressure plasma jet. The film compositions vary depending on the scan velocity and number of treatments, as determined by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The proposed mechanism for the conversion process involves precursor decomposition triggered by plasma-produced species, surface oxidation, and oxygen diffusion into the film, while gases from precursor decomposition diffuse out of the film. The balance between the different contributions to the conversion mechanism appears to be crucial for precursor conversion.