Related references
Note: Only part of the references are listed.Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE
Chinedu Christian Ahia et al.
PHYSICA B-CONDENSED MATTER (2018)
Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells
Chinedu Christian Ahia et al.
AIP ADVANCES (2018)
Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers
Timothy David Eales et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2017)
Material and Device Architecture Engineering Toward High Performance Two-Dimensional (2D) Photodetectors
Qiuhong Cui et al.
CRYSTALS (2017)
Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors
Shouzhu Niu et al.
CRYSTALS (2017)
Design and Analysis of 2-μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer
Xiang Li et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2016)
III-V nanowires and nanowire optoelectronic devices
Yunyan Zhang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2015)
Optimization of high optical gain in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 lasing nano-heterostructure for SWIR applications
H. K. Nirmal et al.
SUPERLATTICES AND MICROSTRUCTURES (2015)
Growth of In(x)Ga1 - Sb-x alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments
Y. Inatomi et al.
NPJ MICROGRAVITY (2015)
Characterisation of Ga1-xInxSb quantum wells (x similar to 0.3) grown on GaAs using AlGaSb interface misfit buffer
Jonathan P. Hayton et al.
AIMS MATERIALS SCIENCE (2015)
Design and modeling of InP-based InGaAs/GaAsSb type-II W type quantum wells for mid-Infrared laser applications
C. H. Pan et al.
JOURNAL OF APPLIED PHYSICS (2013)
Recent advances in GaSb-based structures for mid-infrared emitting lasers: spectroscopic study
Grzegorz Sek et al.
QUANTUM SENSING AND NANOPHOTONIC DEVICES X (2013)
GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 μm
Alexander Bachmann et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2009)
2.7-μm GaSb-Based Diode Lasers With Quinary Waveguide
J. Chen et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2009)
Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5-to 2.7-μm Wavelength Range
Kaveh Kashani-Shirazi et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2009)
Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells
Viera Wagener et al.
PHYSICA B-CONDENSED MATTER (2009)
Lasers and photodetectors for mid-infrared 2-3 μm applications
Wen Lei et al.
JOURNAL OF APPLIED PHYSICS (2008)
Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications
M. Debbichi et al.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS (2008)
High power 2.4 mu m heavily strained type-I quantum well GaSb-based diode lasers with more than 1 W of continuous wave output power and a maximum power-conversion efficiency of 17.5%
L. Shterengas et al.
APPLIED PHYSICS LETTERS (2007)
2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold
A Salhi et al.
ELECTRONICS LETTERS (2004)
Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm
A Salhi et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
Low threshold room-temperature continuous-wave operation of 2.24-3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers
C Lin et al.
APPLIED PHYSICS LETTERS (2004)
Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime
A Salhi et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2004)
Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 μm
L Shterengas et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
GaSb-based mid-infrared 2-5 pm laser diodes
A Joullié et al.
COMPTES RENDUS PHYSIQUE (2003)
Low threshold 2.72 μm GalnAsSb/AlGaAsSb multiple-quantum-well laser
M Grau et al.
ELECTRONICS LETTERS (2002)
Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
JG Kim et al.
APPLIED PHYSICS LETTERS (2002)
Infrared photomodulation spectroscopy of an In0.22Ga0.78Sb/GaSb single quantum well
R Kudrawiec et al.
SUPERLATTICES AND MICROSTRUCTURES (2002)
Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2001)
Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3-2.7 mu m laser structures
S Simanowski et al.
JOURNAL OF CRYSTAL GROWTH (2000)
Share Paper
