Performance simulation of an InGaSb/GaSb based quantum well structure for laser diode applications

The present study reports the impact of structural parameters on optoelectronic properties of InGasb/GaSb based quantum well structures (Qws). The laser diodes are designed to operate at 2.3 mu m at 300 K. Numerical calculations of the emission wavelength, optical and modal gain of TE mode in InGaSb/GaSb laser diode structure have been carried out for various well material compositions, well thickness, number of quantum wells and temperature. The optical confinement factor and threshold current density are also simulated and reported. The calculations were performed using the 8-bands k.p model. For an injected carrier concentration of 1.56 x 1018 cm-3 at 300 K, peak gain value of the order of 1400 cm-1 is reached and a modal gain of 94 cm-1 can be obtained. A threshold current density around 3 kA/cm2, is expected to be obtained through optical losses of about 50 cm-1. The results show that InGaSb/GaSb quantum wells are appropriate for mid-infrared lasers operating at 300 K. (c) 2023 Published by Elsevier B.V.

Automated summary

The impact of structural parameters on the optoelectronic properties of InGaSb/GaSb quantum well structures is investigated in this study. Numerical calculations are performed to determine the emission wavelength, optical and modal gain, optical confinement factor, and threshold current density for different well material compositions, well thickness, number of quantum wells, and temperature. The results show that InGaSb/GaSb quantum wells are suitable for mid-infrared lasers operating at 300 K, with a peak gain value of approximately 1400 cm-1 and a modal gain of 94 cm-1.