Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 17, Issue 6, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202200491
Keywords
magnetic anisotropy; magnetoresistance; SrRuO3; structural symmetry; thin films
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Understanding the magnetotransport properties of SrRuO3 thin films and heterostructures is crucial for both fundamental research and practical applications. This study investigates the correlation between magnetoresistance and structure symmetry using SrRuO3/SrTiO3(001) epitaxial films. The results suggest that the relationship between structural symmetry and magnetoresistance is mediated by the modulations in magnetic anisotropy. These findings provide insights into harnessing the magnetotransport properties of SrRuO3 films and utilizing them in oxide-based spintronic devices.
Understanding the magnetotransport properties of SrRuO3 thin films and heterostructures is essential for both fundamental research and practical applications. While the anomalous Hall effect has been studied extensively, the longitudinal magnetotransport (i.e. magnetoresistance) is not well understood and requires further investigation. Herein, SrRuO3/SrTiO3(001) epitaxial film is used as a model system to systematically investigate the correlation between magnetoresistance and structure symmetry. As the thickness of the SrRuO3 film increases, a structural symmetry transition from tetragonal to orthorhombic occurs. At the same time, a clear sign reversal of magnetoresistance from negative to positive, accompanied by the appearance of strong anisotropy in magnetoresistance measured along the two perpendicular in-plane axes, is observed. These findings further suggest that the correlation between structural symmetry and magnetoresistance is mediated by the modulations in magnetic anisotropy. These results clarified the relationships between structure symmetry, magnetoresistance, and magnetic anisotropy, which can pave a feasible way for harnessing the magnetotransport properties of SrRuO3 films and using this material in oxide-based spintronic devices.
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