☆ 4.4 Article

Avoiding Gallium Pollution in Close-Coupled Showerhead Reactors, Alternative Process Routes

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2023)

Related references

Note: Only part of the references are listed.

Article Crystallography

H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 ω/sq

Mrad Mrad et al.

Summary: Two approaches to GaN surface preparation before regrowth of InAlN layers, using Cl2 or H2 based etch conditions, were studied. The Cl2 based etching resulted in layer degradation and higher sheet resistance values, while an H2 based etch, or desorption, did not degrade the surface morphology and yielded improved sheet resistance. With additional optimization using this approach, excellent sheet resistance values down to 185 Ohm/sq were achieved at a growth temperature of 830 degrees C, maintaining gallium free growth. This regrowth optimization could also be applied to AlGaN regrowth structures for normally off GaN based transistors.

JOURNAL OF CRYSTAL GROWTH (2022)

Add to Collection

Article Engineering, Electrical & Electronic

Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition

Christian Manz et al.

Summary: AlScN/GaN epitaxial heterostructures have shown great potential for high-frequency and high-power electronic applications, with promising device performance. The AlScN/GaN heterostructures processed by MOCVD method exhibit improved structural quality.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2021)

Add to Collection

Article Crystallography

Low-sheet-resistance high-electron-mobility transistor structures with strain-controlled high-Al-composition AlGaN barrier grown by MOVPE

Atsushi Yamada et al.

Summary: The research demonstrates that low-sheet-resistance HEMTs can be achieved by using a strain-controlled high-Al-composition AlGaN barrier. It was found that growing an AlGaN barrier with nitrogen as a carrier gas increases dislocation density and reduces strain, leading to improved electron mobility. Additionally, the use of an AlN spacer helps prevent dislocation and impurity scattering, resulting in successful fabrication of low-sheet-resistance HEMT structures with high Al composition.

JOURNAL OF CRYSTAL GROWTH (2021)

Add to Collection

Article Crystallography

Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors

Mrad Mrad et al.

JOURNAL OF CRYSTAL GROWTH (2020)

Add to Collection

Article Physics, Applied

Solving the problem of gallium contamination problem in InAlN layers in close coupled showerhead reactors

Mrad Mrad et al.

APPLIED PHYSICS EXPRESS (2019)

Add to Collection

Article Crystallography

Understanding and controlling Ga contamination in InAlN barrier layers

M. Mrad et al.

JOURNAL OF CRYSTAL GROWTH (2019)

Add to Collection

Article Physics, Applied

V-pit pinning at the interface of high and low-temperature gallium nitride growth

Romain Bouveyron et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2019)

Add to Collection

Article Crystallography

High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

M. Charles et al.

JOURNAL OF CRYSTAL GROWTH (2018)

Add to Collection

Article Physics, Condensed Matter

The Characterization and Optimization of GaN Cap Layers and SiN Cap Layers on AlGaN/GaN HEMT Structures Grown on 200mm GaN on Silicon

Matthew Charles et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2018)

Add to Collection

Article Engineering, Electrical & Electronic

Multitechnique elemental depth profiling of InAlGaN and InAlN films

Yann Mazel et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2018)

Add to Collection

Article Crystallography

Growth by MOCVD of In(Ga)AIN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas

R. Bouveyron et al.

JOURNAL OF CRYSTAL GROWTH (2017)

Add to Collection

Article Materials Science, Multidisciplinary

Review-The Current and Emerging Applications of the III-Nitrides

Chuanle Zhou et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)

Add to Collection

Article Engineering, Electrical & Electronic

GaN Technology for Power Electronic Applications: A Review

Tyler J. Flack et al.

JOURNAL OF ELECTRONIC MATERIALS (2016)

Add to Collection

Article Materials Science, Multidisciplinary

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

Francesca Iacopi et al.

MRS BULLETIN (2015)

Add to Collection

Article Crystallography

Structural and optical properties of Ga auto-incorporated InAlN epilayers

E. Taylor et al.

JOURNAL OF CRYSTAL GROWTH (2014)

Add to Collection

Article Crystallography

Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating

Suk Choi et al.

JOURNAL OF CRYSTAL GROWTH (2014)

Add to Collection

Article Crystallography

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Jeomoh Kim et al.

JOURNAL OF CRYSTAL GROWTH (2014)

Add to Collection

Article Crystallography

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

Masanobu Hiroki et al.

JOURNAL OF CRYSTAL GROWTH (2013)

Add to Collection

Article Engineering, Electrical & Electronic

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Ronghua Wang et al.

IEEE ELECTRON DEVICE LETTERS (2011)

Add to Collection

Article Chemistry, Physical

A study of indium incorporation in In-rich InGaN grown by MOVPE

Y. Guo et al.

APPLIED SURFACE SCIENCE (2010)

Add to Collection

Article Engineering, Electrical & Electronic

GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

T. Lim et al.

IEEE ELECTRON DEVICE LETTERS (2010)

Add to Collection

Article Crystallography

Hydrogen effects in III-nitride MOVPE

E. V. Yakovlev et al.

JOURNAL OF CRYSTAL GROWTH (2008)

Add to Collection

Article Crystallography

Fundamental chemistry and modeling of group-III nitride MOVPE

J. Randall Creighton et al.

JOURNAL OF CRYSTAL GROWTH (2007)

Add to Collection

© Peeref 2019-2024. All rights reserved.