Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 220, Issue 12, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202200669
Keywords
endohedral filling; functionalization; nanoelectronics; nanowires
Ask authors/readers for more resources
Carbon nanotube (CNT)-based transistors can be converted from ambipolar to unipolar, allowing them to carry large currents for applications requiring high current, such as RF and audio amplifiers.
Carbon nanotube (CNT)-based transistor devices have been demonstrated and are seen as the next-generation alternative to replace the current generation electronic devices based on silicon MOS technology. Their limitations, however, are related to their instability in ambient conditions and technical challenges in scaling up production of individual CNT devices. Herein, a simple technique to convert ambipolar (both n- and p-carrier) individual CNT-based transistors into unipolar (p-type carrier) transistors that carry large currents approximate to +/- 7 mA before saturation is demonstrated. Such large current-carrying capability from an individual or single-bundle CNTs will be ideal for applications that require high currents such as output stages of radio frequency (RF) and audio amplifiers. This work highlights the ability to tune CNT-based transistor devices to suit specific applications, which is essential for the development of next generation of nanoelectronics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available