Journal
PHYSICA SCRIPTA
Volume 98, Issue 5, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1402-4896/accabc
Keywords
dopant; Te; CdSe; thin film; sputtering; nanocomposites; optoelectronics
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CdSe and CdSe:Te thin films were grown on glass substrates by RF magnetron sputtering. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The microscopic images of the films were found to be uniform and homogeneous in nature with a uniform grain and no cracks, and the grain size of CdSe was higher than CdSe:Te thin film. CdSe:Te thin film shows a higher absorption coefficient compared to CdSe in the visible region. The Energy band gaps were found to be 2.01 and 1.73 eV for CdSe and CdSe:Te thin films, respectively. The incorporation of Te atom into the CdSe structure has enhanced the mobility and changed the type of conductivity from n-type to p-type.
CdSe and CdSe:Te thin films were grown on glass substrates by RF magnetron sputtering. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The microscopic images of the films were found to be uniform and homogeneous in nature with a uniform grain and no cracks, and the grain size of CdSe was higher than CdSe:Te thin film. CdSe:Te thin film shows a higher absorption coefficient compared to CdSe in the visible region. The Energy band gaps were found to be 2.01 and 1.73 eV for CdSe and CdSe:Te thin films, respectively. The incorporation of Te atom into the CdSe structure has enhanced the mobility and changed the type of conductivity from n-type to p-type.
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