4.6 Article

Electrical characterization of AgNPs-PVA nanocomposites thin film-based heterojunction diode

Journal

PHYSICA SCRIPTA
Volume 98, Issue 4, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1402-4896/acbe77

Keywords

AgNPs; PAV; nanocomposites; heterojunction diode; impedance spectroscopy; Schottky diode

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The purpose of this study is to investigate the electrical properties of nano metal-semiconductor heterojunctions based on Poly Vinyl Alcohol (PVA). The results showed that the PVA doped silver nanoparticles (AgNPs-PVA) exhibited both Ohmic contacts and rectifying behavior. The conduction mechanism, dielectric relaxation, and current-voltage behavior of the PVA-AgNPs nanocomposite film were thoroughly examined. The presence of a thin barrier layer on the surface of the dried polymer nanocomposites was found to be responsible for the non-Ohmic electrical behavior.
The purpose of this work is to study the results of electrical measurements carried out of nano metal-semiconductor heterojunctions based on Poly Vinyl Alcohol (PVA)to examine the possibilities of either an Ohmic contacts or rectifying behavior like a Schottky junction. The PVA doped silver nanoparticles (AgNPs-PVA)were confirmed and characterized by using x-ray Diffraction (XRD),Fourier-Transform Infrared Spectroscopy (FT-IR), Thermogravimetric analysis (TG) and Differential Scanning Calorimeter (DSC). A thorough investigation of the predominant conduction mechanism, dielectric relaxation, and current-voltage behavior of a polyvinyl alcohol (PVA)-Silver nanoparticles (AgNPs) nanocomposite film has been presented. With two activation energies, Ag nanoparticles have been demonstrated to improve the conductivity and dielectric permittivity of films. In the sample, a non-Debye type asymmetric behavior has been found, which may be analyzed using a modified Cole-Cole model. The temperature dependence of the a.c. conductivity sigma (ac) and power law exponent s is reasonably interpreted by the Correlated Barrier Hopping (CBH) and Small Polaron Tunnelling (SPT) models at low and high frequency ranges, respectively. The junctions were created by spin coating and characterized of evaluated according to their I-V characteristics. Non-Ohmic electrical behavior was observed. The phenomenon supposed to be partly responsible for such nonlinearity is existence of thin barrier layer on the surface of dried polymer nanocomposites, through which charge carriers could pass by tunneling. This Schottky diode manufactured of an AgNPs-PVA nanocomposite was electrically characterized and investigated. However, deeper discussion will be necessary to illuminate all the circumstances leading to understand this behavior.

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