Charge transfer in copper oxide thin films deposited at different electrodeposition potential

The deposition potential affects the structural, morphological, optical, and electrochemical impedance spectroscopy properties of cuprous oxide (Cu2O) thin films formed on copper (Cu) substrates adopting a threeelectrode electrochemical deposition procedure. XRD data revealed that the deposited films have a cubic structure established with desired (111) growth orientation. Scanning electron microscopy (SEM) images reveal that Cu2O film has very well three-sided pyramid-shaped grains which are equally spread over the surface of the Cu substrates and change substantially when the plating potential is changed. The photo-current density of prepared Cu2O thin films was increased from -1.41 x 10-4 to -3.01 x 10-4 A/cm2 with increasing the deposition potential of -0.3 to -0.6 V, respectively. Further, Cu2O thin films obtained at -0.6 V have the minimum charge transfer resistance (Rct) than Cu2O thin films synthesized at -0.3 to -0.5 V, suggesting that Cu2O thin films produced at -0.6 V have the highest electron transfer efficiency.

Automated summary

The deposition potential has an impact on the properties of cuprous oxide (Cu2O) thin films formed on copper (Cu) substrates. XRD analysis shows that the films have a cubic structure with desired (111) growth orientation. SEM observations reveal that the Cu2O film consists of well-distributed three-sided pyramid-shaped grains on the Cu substrate, which change significantly with the plating potential. The photo-current density of the prepared Cu2O thin films increases with the deposition potential and the films produced at -0.6 V have the highest electron transfer efficiency.