4.5 Article

Enhanced thermoelectric power factor in the Cu2Se system by the incorporation of GO/MWCNT

Journal

PHYSICA B-CONDENSED MATTER
Volume 652, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.physb.2022.414620

Keywords

Secondary phase; Density of states; Quantum confinement; Thermopower; Nano inclusions

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The transport capabilities of copper selenide (Cu2Se) and its GO/MWCNT nanocomposites were studied using a cost-effective chemical reduction method and a simple mechanical grinding process. The addition of GO/MWCNT increased the power factor, with maximum values of 881 & mu; W/mK2 and 1120 & mu; W/mK2 for Cu2Se-GO and Cu2Se-MWCNT at 450 degrees C, respectively. The Cu2Se-MWCNT composite exhibited a thermopower that was about 90% greater than the bare Cu2Se. This study provides a method for producing carbon-related thermoelectric composites and enhancing thermoelectric performance by increasing the power factor.
The current study examines the transport capabilities of the thermoelectric material of copper selenide (Cu2Se), and its GO (Graphene oxide)/MWCNT (Multi-Walled Carbon Nano Tubes) nanocomposites synthesized using a cost-effective and straightforward chemical reduction method followed by a simple mechanical grinding process. Raman spectra, Field Emission Scanning Electron Microscopymicrographs, High-Resolution Transmission Electron Microscopy images, and the X- Ray Diffraction peak intensity of the all composites showed the existence of GO/MWCNT in the as-prepared samples. The power factor rose with the addition of GO/MWCNT, reaching maximum values of 881 & mu; W/mK2 and 1120 & mu; W/mK2 at 450 degrees C for Cu2Se-GO and Cu2Se-MWCNT, respectively. According to the findings, the highest thermopower of the Cu2Se-MWCNT composite was around 90 % greater (almost double) than that of bare Cu2Se. This article outlines an efficient and inexpensive process for producing carbon-related thermoelectric composite materials and a viable technique for increasing the power factor to enhance synergistic thermoelectric performance.

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