4.6 Article

Narrowband HgCdTe infrared photodetector with integrated plasmonic structure

Journal

OPTICS LETTERS
Volume 48, Issue 7, Pages 1882-1885

Publisher

Optica Publishing Group
DOI: 10.1364/OL.486788

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This paper presents a HgCdTe infrared photodetector with integrated plasmonic structure. Experimental results show that the device with plasmonic structure exhibits a distinct narrowband effect with a peak response rate close to 2 A/W, which is approximately 34% higher than the reference device. Simulation results agree well with the experiment, and an analysis of the effect of the plasmonic structure confirms its crucial role in enhancing device performance.
The application of plasmonic structure has been demon-strated to improve the performance of infrared photode-tectors. However, the successful experimental realization of the incorporation of such optical engineering structure into HgCdTe-based photodetectors has rarely been reported. In this paper, we present a HgCdTe infrared photodetector with integrated plasmonic structure. The experimental results show that the device with plasmonic structure has a dis-tinct narrowband effect with a peak response rate close to 2 A/W, which is nearly 34% higher compared with the ref-erence device. The simulation results are in good agreement with the experiment, and an analysis of the effect of the plas-monic structure is given, demonstrating the crucial role of the plasmonic structure in the enhancement of the device performance.(c) 2023 Optica Publishing Group

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