4.6 Article

Wide-field probing of silica laser-induced damage precursors by photoluminescence photochemical quenching

Journal

OPTICS LETTERS
Volume 48, Issue 14, Pages 3789-3792

Publisher

Optica Publishing Group
DOI: 10.1364/OL.494189

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We present a wide-field technique to investigate the transient changes in photoluminescence (PL) of defects on silica surfaces. The technique enables simultaneous spatially resolved PL capture with spontaneous quenching behavior. The quenching of PL intensity is attributed to photochemical reactions of surface defects and/or subsurface fractures with ambient molecules. Our theoretical model accurately reproduces the quenching curves, using two quenchable defect populations with different reaction rates. The spatial correlation of the fitting parameters with fractures in silica suggests regions prone to laser-induced damage growth, providing a rapid and non-destructive prediction of laser-induced damage growth.
We describe a wide-field approach to probe transient changes in photoluminescence (PL) of defects on silica surfaces. This technique allows simultaneous capture of spa-tially resolved PL with spontaneous quenching behavior. We attribute the quenching of PL intensity to photochemical reactions of surface defects and/or subsurface fractures with ambient molecules. Such quenching curves can be accurately reproduced by our theoretical model using two quench-able defect populations with different reaction rates. The fitting parameters of our model are spatially correlated to fractures in silica where point defects and mechani-cal stresses are known to be present, potentially indicating regions prone to laser-induced damage growth. We believe that our approach allows rapid spatial resolved identifica-tion of damage prone morphology, providing a new pathway to fast, non-destructive predictions of laser-induced damage growth.& COPY; 2023 Optica Publishing Group

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