Related references
Note: Only part of the references are listed.InGaN-based red light-emitting diodes: from traditional to micro-LEDs
Zhe Zhuang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2022)
N-polar nGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs
A. Pandey et al.
PHOTONICS RESEARCH (2022)
Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2
Daisuke Iida et al.
AIP ADVANCES (2022)
High-efficiency InGaN red micro-LEDs for visible light communication
Yu-Ming Huang et al.
PHOTONICS RESEARCH (2022)
Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses
Jinjoo Park et al.
NATURE PHOTONICS (2021)
Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate
Amelie Dussaigne et al.
APPLIED PHYSICS EXPRESS (2021)
Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm
Panpan Li et al.
APPLIED PHYSICS LETTERS (2021)
Full-color micro-LED display based on a single chip with two types of InGaN/GaN MQWs
Zhou Wang et al.
OPTICS LETTERS (2021)
Demonstration of low forward voltage InGaN-based red LEDs
Daisuke Iida et al.
APPLIED PHYSICS EXPRESS (2020)
Two-dimensional multicolor (RGBY) integrated nanocolumn micro-LEDs as a fundamental technology of micro-LED display
Katsumi Kishino et al.
APPLIED PHYSICS EXPRESS (2020)
Red-Emitting InGaN-Based Nanocolumn Light-Emitting Diodes with Highly Directional Beam Profiles
Ai Yanagihara et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2020)
633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
Daisuke Iida et al.
APPLIED PHYSICS LETTERS (2020)
Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes
Zhe Zhuang et al.
APPLIED PHYSICS LETTERS (2020)
Demonstration of N-Polar III-Nitride Tunnel Junction LED
Yuantao Zhang et al.
ACS PHOTONICS (2020)
Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films
Po-Yi Su et al.
APPLIED PHYSICS LETTERS (2020)
Efficient emission of InGaN-based light-emitting diodes: toward orange and red
Shengnan Zhang et al.
PHOTONICS RESEARCH (2020)
Demonstration of ultra-small (0.2%) for mini-displays
Shubhra S. Pasayat et al.
Applied Physics Express (2020)
Full-Color Realization of Micro-LED Displays
Yifan Wu et al.
NANOMATERIALS (2020)
Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm
S. Zhao et al.
APPLIED PHYSICS LETTERS (2016)
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range
Pavel Aseev et al.
APPLIED PHYSICS LETTERS (2015)
Development of InGaN-based red LED grown on (0001) polar surface
Jong-Ii Hwang et al.
APPLIED PHYSICS EXPRESS (2014)
InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
Sriram Krishnamoorthy et al.
APPLIED PHYSICS LETTERS (2014)
Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content
A. Vaitkevicius et al.
JOURNAL OF APPLIED PHYSICS (2014)
Low resistance GaN/InGaN/GaN tunnel junctions
Sriram Krishnamoorthy et al.
APPLIED PHYSICS LETTERS (2013)
740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE
Kazuhiro Ohkawa et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
Emmanouil Kioupakis et al.
APPLIED PHYSICS LETTERS (2011)
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
Wei Guo et al.
NANO LETTERS (2010)
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
Hisashi Masui et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2008)
Auger recombination in InGaN measured by photoluminescence
Y. C. Shen et al.
APPLIED PHYSICS LETTERS (2007)
Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
T Wang et al.
APPLIED PHYSICS LETTERS (2001)