Red InGaN nanowire LED with bulk active region directly grown on p-Si (111)

A red nanowire LED with an InGaN bulk active region, directly grown on a p-Si (111) substrate, is demonstrated. The LED exhibits relatively good wavelength stability upon increasing injection current and narrowing of the linewidth without quantum confined Stark effect. Efficiency droop sets in at relatively high injection current. The output power and external quantum efficiency are 0.55 mW and 1.4% at 20 mA (20 A/cm2) with peak wavelength of 640 nm, reaching 2.3% at 70 mA with peak wavelength of 625 nm. The operation on the p-Si substrate results in large carrier injection currents due to a naturally formed tunnel junction at the n-GaN/p-Si interface and is ideal for device integration.

Automated summary

A red nanowire LED with an InGaN bulk active region grown on a p-Si (111) substrate is presented. The LED exhibits stable wavelength and narrower linewidth without quantum confined Stark effect as the injection current increases. However, efficiency droop is observed at high injection current. The LED achieves an output power of 0.55 mW and external quantum efficiency of 1.4% at 20 mA (20 A/cm2) with a peak wavelength of 640 nm, reaching 2.3% at 70 mA with a peak wavelength of 625 nm. The use of p-Si substrate allows for large carrier injection currents due to a naturally formed tunnel junction at the n-GaN/p-Si interface, making it ideal for device integration.