SCAPS-based simulation analysis of device parameters of ZnO-inverted polymer solar cells

This article reports the simulation of ZnO-based polymer solar cell (PSC) device parameters. The Solar Cell Capacitance Simulator (SCAPS-1D) software was used to analyze the cell parameters. Two different device configurations of PSCs were simulated with ZnO (an inverted device) and without ZnO (a reference device). The important device processing parameters such as working temperature (T), defect densities (N-t), series (R-s), and shunt (R-sh) resistances on cell performance were investigated. Comparing simulated and experimental results, a good correlation between PSCs was observed. The efficiencies of reference PSCs are 0.87% (simulated) and 0.85% (experimental) and for inverted PSCs are 2.33% (simulated) and 2.32% (experimental). In addition, the structure maintains an efficiency of 2.33-2.14% as the temperature goes up from 300 to 330 K. Comparing the efficiencies of reference and inverted devices, the role of the ZnO layer between the indium tin oxide (ITO) substrate and the device active layer (AL) was quite significant. The efficiencies of PSCs were well-matched, achieving a quite nice similarity between the simulated and experimental devices.

Automated summary

This article reports the simulation of ZnO-based polymer solar cell (PSC) device parameters using SCAPS-1D software. Two device configurations of PSCs were simulated with and without ZnO. The effects of key device processing parameters on cell performance were investigated. The results showed a good correlation between simulated and experimental devices, with well-matched efficiencies.