4.5 Article

A cluster of bilayer diodes model for bulk heterojunction organic solar cells

Journal

OPTICAL AND QUANTUM ELECTRONICS
Volume 55, Issue 6, Pages -

Publisher

SPRINGER
DOI: 10.1007/s11082-023-04781-1

Keywords

Solar cells; Organic materials; Shockley equation; Photocurrent spectra

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Experimental light and dark current density-voltage (J-V) curves of bulkheterojunction (BHJ) P3HT:PCBM and bilayer (BL) P3HT/PCBM based organic solar cells (OSCs) were fitted with the ideal single diode model to estimate the values of the ideality factor n and the order of reverse saturation current J(0). The results showed similar parameter values for both BHJ and BL OSCs under illumination, and different parameter values for dark J-V curves. The difference in parameter values was explained by limited transport in the OSCs' active layer and the contribution of photogenerated carriers to recombination current.
To estimate the value of the ideality factor n and the order of reverse saturation current J(0) in the bulkheterojunction (BHJ) P3HT:PCBM based organic solar cells (OSCs), a multitude of experimentally determined light and dark current density-voltage (J-V) curves from literature were fitted with the ideal single diode model and the obtained results were statistically analyzed. The J-V curves of devices with similar structures, dimensions, fabrication parameters, and operation conditions were considered. The same was done for the bilayer (BL) P3HT/PCBM OSCs. Approximately the same parameter values were obtained for both the BHJ and BL OSC devices under illumination (n(L) is an element of [3, 4] and J(0)(L) is an element of [0.1, 0.01]mA/cm(2)). The gathered dark J-V curves were fitted by using the Shockley equation and statistically analyzed. Interestingly, for the dark J-V curves, n(D) is an element of [2, 3] and J(0)(D) is an element of [0.01, 0.001]mA/cm(2) were obtained. The difference between the n values and the order of J(0) under the light and in the dark was discussed and explained by a limited transport in the OSCs active layer and the contribution of photogenerated carriers to the recombination current. The same J-V parameters obtained for both BHJ and BL devices indicate the same underlying physics in both types of OSCs. By modeling the photogeneration and recombination processes at the D/A interfaces and considering the orientation of the D/A domains with respect to the vector of the resulting electric field in the devices, the short circuit current and J(0)(L) were calculated and compared to the experimental data, and a very good agreement was achieved.

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