Monte Carlo simulations of ion channeling in the presence of dislocation loops: New development in the McChasy code

There has been a long interest in the analysis of radiation damage caused by ion beams due to their presence in space or the nuclear industry and their application in materials modification. One of the methods used for that purpose is Rutherford Backscattering Spectrometry in channeling mode (RBS/C). However, the presence of different defect types makes it difficult to interpret RBS/C spectra so extended defects are often neglected in the data analysis. The McChasy Monte Carlo simulation code has been developed to analyze channeling data in crystals containing different defect types using periodically repeated relatively small simulation cells (similar to 10(2) atoms). Here we report and describe its recent feature: a model of dislocation loops. Having in mind that the interactions of the channeling ion beam with defects depend on the beam energy, the validity of the model was confirmed by analyzing RBS/C experiments performed at different energies for the case of 300 keV Eu-implanted GaN.

Automated summary

There is a long-standing interest in studying radiation damage caused by ion beams, which are present in space or the nuclear industry and used in materials modification. Rutherford Backscattering Spectrometry in channeling mode (RBS/C) is commonly employed to analyze the damage, but the presence of various defect types makes interpretation of RBS/C spectra challenging. To address this issue, the McChasy Monte Carlo simulation code was developed, which utilizes small simulation cells to analyze channeling data in crystals with different defect types. This study introduces a new feature of the code, a model of dislocation loops, and validates its effectiveness by analyzing RBS/C experiments performed at different beam energies for Eu-implanted GaN with an energy of 300 keV.