Resonant plasmonic micro-racetrack modulators with high bandwidth and high temperature tolerance

We demonstrate plasmonic micro-racetrack modulators for intensity-modulated transmission at 408 Gbps and 12.3 femtojoules per bit. The modulators offer wide bandwidth and the devices show improved temperature stability over conventional approaches. Resonant modulators encode electrical data onto wavelength-multiplexed optical carriers. Today, silicon microring modulators are perceived as promising to implement such links; however, they provide limited bandwidth and need thermal stabilization systems. Here we present plasmonic micro-racetrack modulators as a potential successor of silicon microrings: they are equally compact and compatible with complementary-metal-oxide-semiconductor-level driving voltages, but offer electro-optical bandwidths of 176 GHz, a 28 times improved stability against operating temperature changes and no self-heating effects. The temperature-resistant organic electro-optic material enables operation at 85 degrees C device temperature. We show intensity-modulated transmission of up to 408 Gbps at 12.3 femtojoules per bit with a single resonant modulator. Plasmonic micro-racetrack modulators offer a solution to encode high data rates (for example, the 1.6 Tbps envisioned by next-generation communications links) at a small footprint, with low power consumption and marginal, if no, temperature control.

Automated summary

We demonstrate plasmonic micro-racetrack modulators for high-speed intensity-modulated transmission. These modulators offer wide bandwidth, improved temperature stability, and no self-heating effects. They can encode electrical data onto wavelength-multiplexed optical carriers.