Journal
NATURE NANOTECHNOLOGY
Volume 18, Issue 5, Pages 446-447Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41565-023-01390-7
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The growth of molybdenum disulfide at 275 degrees C and the monolithic integration of 2D transistors with silicon complementary metal oxide semiconductor circuits have been demonstrated.
Growth of molybdenum disulfide at 275 degrees C and monolithic integration of 2D transistors with silicon complementary metal oxide semiconductor circuits have been demonstrated.
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