4.8 Article

Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire

Journal

ADVANCED MATERIALS
Volume 27, Issue 26, Pages 3921-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201500268

Keywords

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Funding

  1. National Natural Science Foundation of China [91333207]
  2. Special Program for the State Key Program of National Natural Science of China [61136001]
  3. Guangdong Natural Science Foundation [2014A030310014]

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A low-dimensional-structure vacuum-ultraviolet-sensitive photodetector based on high-quality aluminum nitride (AlN) micro-/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum-ultraviolet (VUV) photon detection and opens a way for developing diminutive, power-saving, and low-cost VUV materials and sensors that can be potentially applied in geospace sciences and solar-terrestrial physics.

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