Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 34, Issue 2, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4936336
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Funding
- CONACyT Project [179304]
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The early stages of the oxidation of the Si[001] 2 x 1 surface were studied with synchrotron radiation photoelectron spectroscopy. The analysis was based on the block approach, which is a refinement of spectra-subtraction that accounts for changes on the background signal and for band-bending shifts. By this method, it was possible to robustly show that the formation of Si1+ is due to oxygen bonding to the upper dimer atoms. Our results contrast with ab initio calculation, which indicates that the most favorable bonding site is the back-bond of the down-dimer. (C) 2015 American Vacuum Society.
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