All-solution-processed perovskite/gallium nitride particles hybrid visible-blind ultraviolet photodetectors

Last decades have witnessed the rapid development of ultraviolet (UV) photodetectors in diversity of applications. The III-nitride semiconductor and metal halide perovskite have both performed promising UV-sensing optoelectronic properties. However, they are still suffering from either the high temperature epitaxial-growth or low photocurrent generated in UV range. In this work, we demonstrate an innovative MAPbCl(3)/GaN particle hybrid device with all-solution-processed deposition methods. Comparing to the control MAPbCl(3) photoconductors, the photo-sensing ability of the hybrid device with the optimal concentration of GaN particles is more than one order of magnitude enhanced, and report a responsivity of 86 mA W-1, a detectivity of 3.1 x 10(11) Jones and a rise/fall time of 1.1/10.7 ms at 360 nm. The photocurrent increment could be attributed to the enhanced UV absorption of GaN particles and facilitated charge separation and photoconductive gain at MAPbCl(3)/GaN heterojunction. This work paves a pathway towards the large-scale low-cost UV photodetectors in versatile applications.

Automated summary

The rapid development of UV photodetectors in various applications has been seen in the last few decades. Both III-nitride semiconductors and metal halide perovskites have shown promising UV-sensing optoelectronic properties, but they still face challenges such as high temperature growth or low photocurrent in the UV range. In this study, an innovative MAPbCl(3)/GaN particle hybrid device with all-solution-processed deposition methods was demonstrated. The hybrid device, with optimal concentration of GaN particles, showed significantly enhanced photo-sensing ability, with a responsivity of 86 mA W-1, a detectivity of 3.1 x 10(11) Jones, and a rise/fall time of 1.1/10.7 ms at 360 nm. The increased photocurrent can be attributed to the enhanced UV absorption of GaN particles and facilitated charge separation and photoconductive gain at the MAPbCl(3)/GaN heterojunction. This work opens up possibilities for large-scale, low-cost UV photodetectors in versatile applications.