Journal
ADVANCED MATERIALS
Volume 27, Issue 18, Pages 2852-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201500037
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Funding
- MOST of China [2012CB932702, 2012CB932701]
- NSF of China [11374022, 61371001, 11304003, 61321001]
- Foundation for the Author of National Excellent Doctoral Dissertation of China [201241]
- Specialized Research Fund for the Doctoral Program of Higher Education of China [20130001110030]
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The piezoelectric and piezoresistive effects of InAs nanowires are experimentally demonstrated for the first time and are observed to strongly depend on the NW crystal structure. While single-crystalline < 0001 > oriented wurtzite nanowires exhibit remarkable piezoelectric and piezoresistive effects, they are negligible in single-crystalline wurtzite < 11 (2) over bar0 >, zinc blende < 011 >, < 103 >, <(2) over bar(1) over bar1 > oriented nanowires, and significantly suppressed by the presence of stacking faults.
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