Gate-Tunable Multiband Transport in ZrTe5 Thin Devices

Interest in ZrTe5 has been reinvigorated inrecent yearsowing to its potential for hosting versatile topological electronicstates and intriguing experimental discoveries. However, the mechanismof many of its unusual transport behaviors remains controversial:for example, the characteristic peak in the temperature-dependentresistivity and the anomalous Hall effect. Here, through employinga clean dry-transfer fabrication method in an inert environment, wesuccessfully obtain high-quality ZrTe5 thin devices thatexhibit clear dual-gate tunability and ambipolar field effects. Suchdevices allow us to systematically study the resistance peak as wellas the Hall effect at various doping densities and temperatures, revealingthe contribution from electron-hole asymmetry and multiple-carriertransport. By comparing with theoretical calculations, we suggesta simplified semiclassical two-band model to explain the experimentalobservations. Our work helps to resolve the longstanding puzzles onZrTe(5) and could potentially pave the way for realizingnovel topological states in the two-dimensional limit.

Automated summary

Interest in ZrTe5 has been renewed due to its potential for hosting topological electronic states and intriguing experimental discoveries. However, the mechanisms behind its unusual transport behaviors like the temperature-dependent resistivity peak and anomalous Hall effect remain controversial. In this study, high-quality ZrTe5 thin devices with dual-gate tunability and ambipolar field effects were obtained, allowing for a systematic study of the resistance peak and Hall effect at different doping densities and temperatures. The findings suggest a simplified two-band model to explain these experimental observations. This work resolves longstanding puzzles on ZrTe5 and could lead to the realization of novel topological states in the two-dimensional limit.