4.8 Article

Enhancement of Amplified Spontaneous Emission by Electric Field in CsPbBr3 Perovskites

Journal

NANO LETTERS
Volume 23, Issue 5, Pages 1637-1644

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c02944

Keywords

amplified spontaneous emission; perovskite; field enhancement; ion migration

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Perovskite gain materials can sustain continuous-wave lasing at room temperature. However, electrical stimulation supplementing optical has reduced gain performance in the past. In this study, researchers found that the addition of an electric field can turn on/off the amplified spontaneous emission (ASE) in a CsPbBr3 perovskite light-emitting diode (LED), and a positive bias voltage leads to a reduction in the optical ASE threshold.
Perovskite gain materials can sustain continuous-wave lasing at room-temperature. A first step toward the unachieved goal of electrically excited lasing would be an improvement in gain when electrical stimulation is added to the optical. However, to date, electrical stimulation supplementing optical has reduced gain performance. We find that amplified spontaneous emission (ASE) in a CsPbBr3 perovskite light-emitting diode (LED) held under invariant subthreshold optical excitation can be turned on/off by the addition/removal of an electric field. A positive bias voltage leads to a factor of 3 reduction in the optical ASE threshold, the cause of which can be attributed to an enhancement of the radiative rate. The slow components (10 s time scale) of the modulation in the photoluminescence and ASE when the voltage is changed suggest that the relocation of mobile ions trigger the increased radiative rate and observed lowering of ASE thresholds.

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