Electrically Driven Plasmons in Metal-Insulator-Semiconductor Tunnel Junctions: The Role of Silicon Amorphization

We investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that amorphization of the silicon crystal at a narrow region near the junction due to the applied voltage plays a critical role in determining the nature of the emission. Furthermore, we suggest that the change in the properties of the insulating layer above a threshold voltage determines the EDP spatial properties, from being spatially uniform when the device is subjected to low voltages, to a spotty pattern peaking at high voltages. We emphasize the role of the high-energy emission as an unambiguous tool for distinguishing between EDP and radiative recombination of electrons and holes in the semiconductor.

Automated summary

In this study, we investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that the amorphization of the silicon crystal near the junction due to applied voltage is critical in determining the nature of the emission. We also suggest that the properties of the insulating layer change above a certain voltage threshold, resulting in different spatial properties of EDP emission.