Achieving High Responsivity and Detectivity in a Quantum-Dot-in-Perovskite Photodetector

This work reports on quantum dots (QDs) in perovskite photodetectors showing high optoelectronic performance via quantum-dot-assisted charge transmission. The self-powered broad-band photodetector constructed with SnS QDs in FAPb(0.5)Sn(0.5)I(3) perovskite can capture incoming optical signals directly at zero bias. The QDs-in-perovskite photodetector exhibits a high sensitivity in the wavelength range from 300 to 1000 nm. Its responsivity at 850 nm reaches 521.7 mA W-1, and a high specific detectivity of 2.57 x 10(12) jones can be achieved, which is well beyond the level of previous self-powered broad-band photodetectors. The capability of quantum-dot-in-perovskite photodetectors as data receivers has been further demonstrated in a visible-light communication application.

Automated summary

This work presents the use of quantum dots (QDs) in perovskite photodetectors to achieve high optoelectronic performance through quantum-dot-assisted charge transmission. The self-powered broad-band photodetector constructed with SnS QDs in FAPb(0.5)Sn(0.5)I(3) perovskite shows direct capture of incoming optical signals at zero bias. The QDs-in-perovskite photodetector exhibits a high sensitivity in the wavelength range from 300 to 1000 nm, with a responsivity of 521.7 mA W-1 at 850 nm and a specific detectivity of 2.57 x 10(12) jones, surpassing previous self-powered broad-band photodetectors. The capability of quantum-dot-in-perovskite photodetectors as data receivers has been demonstrated in a visible-light communication application.