Electroluminescence in rare-earth doped n-InSe crystal promising for optoelectronics

n-InSe single crystals were grown by the Bridgman method. Electroluminescence in undoped and rare-earth-doped (Dy and Er) crystals has been experimentally studied. It has been established that in both groups of crystals, electroluminescence is observed at T <= 160-165K in the wavelength range lambda approximate to 0.900-1.150 mu m, regardless of the values of initial dark resistivity (rho(D0)) and concentration (N). The volt-brightness characteristics and the dependence of brightness on the current strength have been investigated. It was found that the brightness also depends on the values of initial dark resistivity and concentration of the impurities. The highest luminescence brightness and the most stable and reproducible characteristics of electroluminescence are observed in doped crystals. The features of electroluminescence in undoped and rare-earth-doped crystals obey the criteria of theoretical concepts developed for spatially homogeneous crystalline semiconductors. All experiments were comparatively performed for both undoped and rare-earth-doped crystals.

Automated summary

n-InSe single crystals were grown using the Bridgman method and the electroluminescence phenomenon was experimentally studied in undoped and rare-earth-doped (Dy and Er) crystals. It was observed that electroluminescence occurred at T <= 160-165K and in the wavelength range of approximately 0.900-1.150 μm in both groups of crystals, regardless of initial dark resistivity (rho(D0)) and impurity concentration (N). The brightness characteristics and its dependence on current strength were investigated, with results showing that brightness also depended on initial dark resistivity and impurity concentration. The highest luminescence brightness and the most stable and reproducible electroluminescence characteristics were observed in doped crystals. The features of electroluminescence in both undoped and rare-earth-doped crystals conformed to theoretical concepts developed for spatially homogeneous crystalline semiconductors.