Inductive coupling effect of parasitic loaded dual layer antenna for WLAN applications

In this work inductive coupling effect of parasitic element loaded dual layer elliptical shaped patch antenna (ESPA) for WLAN applications is reported. The overall dimension of the designed ESPA is 30 x 15 x 3.2 mm(3), with two FR4 substrate materials positioned as lower and upper layers, each with a height of 1.6 mm and a dielectric constant value of 4.4. The ESPA structure was placed in the lower layer above the defective ground structure (DGS), and it was associated with proximity coupled 50 ohm matching transmission lines and an upper layer loaded parasitic element. Because of the efficient inductive coupling between the bottom layer and the parasitic element, the gain has improved and due to defected ground structure (DGS) the bandwidth has improved. With help of parasitic element, star shape patch structure and DGS provided good impedance bandwidth as well as gain which is novelty in this work. The comparison of single layer and dual layer findings revealed that the dual layer with the same height substrate performed better. The antenna resonate at 5.2 GHz and has a bandwidth of 1300 MHz (4.2 GHz-5.5 GHz). The simulated and experimental bandwidth results are extremely accurate. The proposed structure was designed by using 3D EM computer simulation technology microwave studio (CST MWS) which helpful to analyze various antenna parameters. The proposed antenna has been modelled, built and tested. At the operating frequency of 5.2 GHz, the simulated antenna gain is 5.1 dB and the measured return loss is - 33.25 dB. This proposed structure is ideal for Wireless Local Area Network (WLAN) applications.

Automated summary

This work reports on the inductive coupling effect of a parasitic element loaded dual layer elliptical shaped patch antenna (ESPA) for WLAN applications. The designed ESPA has overall dimensions of 30 x 15 x 3.2 mm³, with FR4 substrate materials as lower and upper layers, each with a height of 1.6 mm and a dielectric constant of 4.4. The ESPA structure, placed on the lower layer above the defective ground structure (DGS), is associated with proximity coupled 50 ohm matching transmission lines and an upper layer loaded parasitic element. The inductive coupling between the bottom layer and the parasitic element improves the gain and the bandwidth is improved due to the defected ground structure (DGS).