4.4 Article

Electrochemical performance of gold-decorated graphene electrodes integrated with SiC

Journal

MICROELECTRONIC ENGINEERING
Volume 278, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.mee.2023.112042

Keywords

Graphene; Zero-layer graphene; 4H-SiC electrode; Gold nanostructures; Annealing; Raman; Impedance spectroscopy

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In this study, the interface properties of gold decorated graphenized surfaces of 4H-SiC for electrochemical electrodes were investigated. A two-step process involving sputter deposition of Au layers onto 4H-SiC substrates and thermal annealing was used. Various analysis techniques were employed to understand the physical processes and intrinsic properties of the graphenized SiC. The results shed light on the interface properties of the heterostructures and provide insights for developing high performance catalytic and sensing devices.
Here we investigate the interface properties of gold (Au) decorated graphenized surfaces of 4H-SiC intended for electrochemical electrodes. These are fabricated using a two-step process: discontinuous Au layers with a nominal thickness of 2 nm are sputter-deposited onto 4H-SiC substrates with different graphenization extent-zero-layer graphene (ZLG) and monolayer epitaxial graphene) -followed by thermal annealing. By performing combined morphometric analysis, Raman mapping analysis, conductive atomic force microscopy, and electrochemical impedance spectroscopy measurements, we shed light on the relationship between physical processes (Au intercalation, particle re-shaping, and de-wetting) caused by thermal annealing and the intrinsic properties of graphenized SiC (vertical electron transport, charge-transfer properties, vibrational properties, and catalytic activity). We find that the impedance spectra of all considered structures exhibit two semicircles in the high and low frequency regions, which may be attributed to the graphene/ZLG/SiC (or Au/graphene/ZLG/SiC) and SiC/ZLG/graphene/electrolyte (or SiC/ZLG//Au/electrolyte) interfaces, respectively. An equivalent circuit model is proposed to estimate the interface carrier transfer parameters. This work provides an in-depth comprehension of the way by which the Au/2D carbon/SiC interaction strength influences the interface properties of heterostructures, which can be helpful for developing high performance catalytic and sensing devices.

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