Fabrication of GaN-air channels for embedded photonic structures

Refractive index engineering is a key element in the design of optoelectronic device structures. In this work we present a method for the fabrication of buried hollow channels, periodically arranged inside GaN structures. The method is based on selective area doping and electrochemical etching. Channels width is defined by the selective area ion implantation mask geometry while the channel vertical dimension depends on the implantation energy and annealing conditions. In this work we used implantation with Si 100 keV and dose 2.6.1015 cm-2 into GaN. Next, a 100 nm GaN layer was grown by plasma-assisted molecular beam epitaxy (PAMBE). After annealing at 1070 degrees C for 5 min, selectively doped regions were removed in the process of electrochemical etching (ECE), forming periodically arranged empty volumes. Annealing resulted in partial strain removal as observed by X-Ray diffraction. Surface roughness was evaluated at every stage of the process: after implantation, after regrowth and after annealing, and it is promising for the integration of the proposed technology with device fabrication and processing. The flexibility in the mask design for selective ion implantation and a high refractive index contrast between GaN and air, make the proposed technology attractive for the fabrication of buried photonic structures such as diffraction gratings.

Automated summary

A method for fabricating buried hollow channels inside GaN structures using selective area doping and electrochemical etching is presented. The channel width is defined by selective area ion implantation mask geometry and the vertical dimension depends on implantation energy and annealing conditions. The proposed technology has potential for integration with device fabrication and processing, as observed by X-ray diffraction for strain removal and surface roughness evaluation.