Related references
Note: Only part of the references are listed.Study of the structure, electrical properties, and energy storage performance of ZnO-modified Ba0.65Sr0.245Bi0.07TiO3 Pb-free ceramics
Yang Li et al.
CERAMICS INTERNATIONAL (2020)
Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas
Reo Yamamoto et al.
JOURNAL OF CRYSTAL GROWTH (2020)
Effects of As2 pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy
Shigekazu Okumura et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties
Jordan D. Greenlee et al.
JOURNAL OF APPLIED PHYSICS (2014)
Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
R. Dalmau et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
Ramon Collazo et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 (2011)
Increased electron mobility in n-type Si-doped AlN by reducing dislocation density
Yoshitaka Taniyasu et al.
APPLIED PHYSICS LETTERS (2006)
n-type AlN layer by Si ion implantation
Masakazu Kanechika et al.
APPLIED PHYSICS LETTERS (2006)
Carrier mobility model for GaN
TT Mnatsakanov et al.
SOLID-STATE ELECTRONICS (2003)
Some effects of oxygen impurities on AlN and GaN
GA Slack et al.
JOURNAL OF CRYSTAL GROWTH (2002)
Fe ion implantation in GaN: Damage, annealing, and lattice site location
C Liu et al.
JOURNAL OF APPLIED PHYSICS (2001)