Journal
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Volume 291, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mseb.2023.116394
Keywords
Indium oxide nanowires; Ag-loading; Formaldehyde; Vacancy oxygen; Gas-sensing performance
Ask authors/readers for more resources
Ag nanoparticles were implanted into mesoporous indium oxide nanowires to form Ag-loaded In2O3 NW, which greatly influenced the specific surface area and interface oxygen vacancies. Ag-loaded In2O3 sensors showed improved gas-sensing performance for formaldehyde (HCHO), with a lower operating temperature and higher response compared to In2O3 sensors. The formation of Schottky heterojunctions at the interface between Ag and In2O3 increased the resistance of Ag-loaded In2O3 sensors in air and HCHO gas.
As the core component of gas sensors, the sensing mediums with excellent gas-sensing performance are strongly required. Herein, Ag nanoparticles were implanted into mesoporous indium oxide nanowires (In2O3 NWs) to form Ag-loaded In2O3 NW. All results indicated that Ag nanoparticles are well-dispersed in mesopores of In2O3 NWs and significantly affect specific surface area and interface oxygen vacancies. Moreover, Ag-loading tremendously improves the formaldehyde (HCHO) gas-sensing performance of Ag-loaded In2O3 sensors. Owing to Ag catalysis, the operating temperature decreases from 210 & DEG;C for In2O3 sensor to 150 & DEG;C for Ag-loaded In2O3 sensor. Ag0.025-In2O3 sensor exhibits the highest response (877.3) to 10 ppm HCHO for more oxygen vacancies and Ag spillover effect, which is about 33 times of In2O3 sensor. The formation of Schottky heterojunctions at the interface between Ag and In2O3 leads to the electron transition from In2O3 to Ag, which increases the resistance in air and HCHO gas for Ag-loaded In2O3 sensors.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available