Effect of Se substitution on the electric, dielectric and ferroelectric properties of Bi4Ti3O12

Samples of pure bismuth titanate (Bi4Ti3O12) and Selenium (Se) substituted bismuth titanate (Bi4Ti2.8Se0.2O12) were prepared by a mixed-oxide reaction method. Partial substitution of Se at Ti sites (20 %) appears to induce some structural changes. The substituted sample crystallizes in an orthorhombic structure with the B2ab space group like the parent. The P-E hysteresis loops indicate the presence of ferroelectricity in the sample at room temperature. The electrical and dielectric characteristics of the sample were studied over a broad range of temperature (27-300 degrees C) and frequency (1 kHz-1 MHz) along with its parent. The electrical transport in both samples follows Jonscher's Power law and fits into two different theoretical models. After substitution, enhancement in dielectric ordering and reduction in tangent loss are observed at 1 MHz frequency. Bi4Ti2.8-Se0.2O12 ceramics can be a good starting point for the development of a new material for microwave devices.

Automated summary

Pure bismuth titanate (Bi4Ti3O12) and Selenium (Se) substituted bismuth titanate (Bi4Ti2.8Se0.2O12) samples were prepared using a mixed-oxide reaction method. Partial substitution of Se at Ti sites induces changes in the structural properties. The substituted sample exhibits ferroelectricity and shows enhanced dielectric properties at 1 MHz frequency. This material can serve as a starting point for the development of microwave devices.