Organic-inorganic FAPbBr3 perovskite based flexible optoelectronic memory device for light-induced multi level resistive switching application

Herein, we report the multilevel resistive switching memory performance of the fabricated Al/FAPbBr(3)/ITO structure. The device exhibited bipolar RS behaviour with excellent electrical performances such as no forming process, low operating voltages, low power consumption, good stability and a high ON/OFF ratio (similar to 10(3)). The device also showed the multilevel cell capability which was achieved by delicate control over compliance current and the stopping voltage. Owing to the rising demand for flexible devices, the constancy and uniformity of the RS behaviour of our fabricated device with mechanical robustness were confirmed by examining the memory performance of the device under various bending conditions. Besides, the device exhibited photo response-ability for which the RS effect can be enhanced by light irradiation. This investigation may be explored in the data encoding process with a certain wavelength of incident light. Intrinsic phenomena of RS effect have been explained by the growth and rupture of electric field-induced reproducible conducting filaments formed by halide vacancies as well as active Al atoms. This work provides a way for exploring the organic-inorganic hybrid perovskites nanocrystals for the development of next-generation low power consumption, light-assisted, flexible volatile memory devices.

Automated summary

In this study, we present the performance of a multilevel resistive switching memory device based on an Al/FAPbBr(3)/ITO structure. The device exhibits bipolar RS behavior with excellent electrical characteristics such as no forming process, low operating voltages, low power consumption, good stability, and a high ON/OFF ratio. The device also shows multilevel cell capability achieved through precise control of compliance current and stopping voltage. Furthermore, the memory performance of the device under various bending conditions confirms its mechanical robustness and stability, making it suitable for flexible device applications. Additionally, the device exhibits photo response-ability, with the RS effect being enhanced by light irradiation. The growth and rupture of reproducible conducting filaments formed by halide vacancies and active Al atoms explain the intrinsic phenomena of the RS effect. This work provides a pathway for the development of next-generation low power consumption, light-assisted, flexible volatile memory devices using organic-inorganic hybrid perovskite nanocrystals.