Phase diagram of the semiconductor GaSb-ferromagnet GaMn system

In this work we report the results of complex studies of basic properties and phase equilibria in GaSb-GaMn system within wide composition range. Investigated alloys were synthesized using regimes with relatively low crystallization speed, which resulted in a formation of stable monoclinic modification of GaMn, as suggested by the X-ray diffraction data analysis. The latter also suggested the negligible role of mutual solubility of components in agreement with spatial distribution of elements in studied alloys determined using energy dispersive X-ray spectroscopy. Combination of microstructural data and results of differential thermal analysis reveals the eutectic character of interaction in GaSb-GaMn system with eutectic composition corresponding to 45 mol.% of GaMn and melting temperature of 609 degrees C. This temperature is substantially lower than reported values of peritectic melting temperature of GaMn, which suggests the possibility of stabilizing hard ferromagnetic L10-GaMn modification in GaSb-GaMn system without substantial deterioration of crystal quality typical for GaMn compounds.

Automated summary

In this study, we conducted complex studies on the properties and phase equilibria of the GaSb-GaMn system over a wide composition range. X-ray diffraction analysis revealed the formation of a stable monoclinic GaMn phase in the alloys synthesized at relatively low crystallization speeds. Energy dispersive X-ray spectroscopy confirmed the negligible mutual solubility of the components. Microstructural data and differential thermal analysis showed that the interaction in the GaSb-GaMn system exhibited eutectic behavior, with a eutectic composition of 45 mol.% GaMn and a melting temperature of 609 degrees C. This temperature is significantly lower than the reported peritectic melting temperature of GaMn, indicating the possibility of stabilizing the hard ferromagnetic L10-GaMn phase in the GaSb-GaMn system without compromising crystal quality.