Journal
ADVANCED MATERIALS
Volume 27, Issue 30, Pages 4423-4429Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201501758
Keywords
anisotropic; band gaps; black arsenic; black phosphorus; infrared semiconductors; layered materials
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Funding
- Office of Naval Research (ONR)
- Air Force Office of Scientific Research (AFOSR)
- Deutsche Forschungsgemeinschaft (DFG) [1415]
- TUM Graduate School
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New layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.
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