4.5 Article

First principles study on magnetic anisotropy of 5d transition metal doped graphdiyne

Journal

JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 35, Issue 40, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1361-648X/acdfa0

Keywords

graphdiyne; transition metal; magnetocrystalline anisotropy; strain

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This paper investigates the magnetic properties of graphdiyne (GDY) doped with 5d transition metal (TM) atoms through first-principles calculations. The TM atoms are stably embedded within the triangular cavities of GDY, resulting in significant magneto-crystal anisotropy energy. The introduction of TM atoms at the top can greatly alter the magneto-crystal anisotropy energy value of the system, leading to a flip in the easy magnetization axis. Moreover, the magneto-crystal anisotropy energy value of Ta@GDY can be modulated by strain. The research unveils GDY as a promising substrate for two-dimensional magnetic materials in future magnetic memory devices.
The exceptional porous architecture of graphdiyne (GDY) renders it a potential candidate for magnetic storage media. This paper delves into the magnetic properties of GDY doped with 5d transition metal (TM) atoms via first-principles calculations. Our results divulge the stable embedding of these TM atoms within the triangular cavities of GDY, yielding a significant magneto-crystal anisotropy energy. In particular, Ta@GDY exhibits a remarkable magneto-crystal anisotropy energy value of 11.72 meV. By introducing TM atoms at the top, one could significantly change the magneto-crystal anisotropy energy value of the system, subsequently flipping the easy magnetization axis. The MAE values of Os-W3@GDY and Re-Ir-3@GDY are -21.60 meV and -41.68 meV, which are expanded by a factor of 4 and 6 compared to those before the introduction of the top atom. Furthermore, we observed that the magneto-crystal anisotropy energy value of Ta@GDY is modulated by strain. Our research uncovers GDY as a promising substrate for two-dimensional magnetic materials that could be exploited in forthcoming magnetic memory devices.

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