Selective area doping of GaN toward high-power applications

Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal-oxide-semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Automated summary

Selective area doping in GaN, especially p-type, is crucial for advanced device structures in high-power applications. This paper reviews recent advances in selective area etching and regrowth, ion implantation, and polarity-dependent doping, which may contribute to the practical realization of GaN-based power devices.