Related references
Note: Only part of the references are listed.Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes
Yuan Bu et al.
JOURNAL OF APPLIED PHYSICS (2017)
Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes
Atsushi Tanaka et al.
JOURNAL OF APPLIED PHYSICS (2016)
Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers
Fangzhen Wu et al.
JOURNAL OF ELECTRONIC MATERIALS (2015)
Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
Lin Dong et al.
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 (2014)
Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress
Kazuya Konishi et al.
JOURNAL OF APPLIED PHYSICS (2013)
Conversion of basal plane dislocations to threading edge dislocations in 4H-SiC epilayers by high temperature annealing
Xuan Zhang et al.
JOURNAL OF APPLIED PHYSICS (2012)
Photoluminescence of Frank-type defects on the basal plane in 4H-SiC epilayers
Isaho Kamata et al.
APPLIED PHYSICS LETTERS (2010)
Characterization of the carrot defect in 4H-SiC epitaxial layers
J. Hassan et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique
Hidekazu Tsuchida et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2009)
Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching
H. Tsuchida et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Basal plane dislocation-free epitaxy of silicon carbide
Z Zhang et al.
APPLIED PHYSICS LETTERS (2005)
Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography
T Ohno et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes
S Ha et al.
JOURNAL OF APPLIED PHYSICS (2004)
Stacking fault formation in SiC p-i-n diodes of (11-20) orientation
S Ha et al.
APPLIED PHYSICS LETTERS (2004)
Recombination-enhanced defect motion in forward-biased 4H-SiC p-n diodes
M Skowronski et al.
JOURNAL OF APPLIED PHYSICS (2002)
Dislocation conversion in 4H silicon carbide epitaxy
S Ha et al.
JOURNAL OF CRYSTAL GROWTH (2002)
Structural instability of 4H-SiC polytype induced by n-type doping
JQ Liu et al.
APPLIED PHYSICS LETTERS (2002)