Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 14, Issue 15, Pages 3669-3676Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.3c00024
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This study reports a new low temperature, solution-based synthetic route to colloidal InN nanocrystals with tunable photoluminescence. These nanocrystals are phase-pure wurtzite InN and can be used as key materials in NIR LEDs, photodetectors, and multijunction solar cells.
Indium nitride (InN) is an air stable III???V semiconductor with a small band gap of 0.7 eV and as such is of interest as a key material in near-infrared (NIR) LEDs, photodetectors, and multijunction solar cells. Conventionally, InN has been synthesized through physical deposition techniques which involve extreme temperatures and harsh conditions and yield nonluminescent materials. Here we report a new low temperature, solution-based synthetic route to colloidal InN nanocrystals that produces phase-pure wurtzite InN with tunable photoluminescence. The luminescence is attributed to the presence of InN surface states.
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