Mechanism of Delocalization-Enhanced Exciton Transport in Disordered Organic Semiconductors

Large exciton diffusion lengths generally improve the perform-ance of organic semiconductor devices, because they enable energy to be transported farther during the exciton lifetime. However, the physics of exciton motion in disordered organic materials is not fully understood, and modeling the transport of quantum-mechanically delocalized excitons in disordered organic semiconductors is a computational challenge. Here, we describe delocalized kinetic Monte Carlo (dKMC), the first model of three-dimensional exciton transport in organic semiconductors that includes delocalization, disorder, and polaron formation. We find that delocalization can dramatically increase exciton transport; for example, delocalization across less than two molecules in each direction can increase the exciton diffusion coefficient by over an order of magnitude. The mechanism for the enhancement is 2-fold: delocalization enables excitons to hop both more frequently and further in each hop. We also quantify the effect of transient delocalization (short-lived periods where excitons become highly delocalized) and show that it depends strongly upon the disorder and transition dipole moments.

Automated summary

We propose a three-dimensional kinetic Monte Carlo model to study exciton transport in disordered organic semiconductors, incorporating delocalization, disorder, and polaron formation. Our results show that delocalization greatly enhances the exciton diffusion coefficient, leading to improved device performance.