Electric-Field Control of Spin Polarization above Room Temperature in Single-Layer A-Type Antiferromagnetic Semiconductor

Two-dimensional (2D) antiferromagnets have drawn great interest for absence of stray fields in antiferromagnetic their spin polarization above room temperature for practical applications. Herein, a general strategy is reported to realize the control of spin polarization above room temperature in 2D A-type AFM semiconductors by external electric field based on firstprinciples calculations, exemplified by transition metal monohalide MnCl and carbide MXenes Cr2CX2 (X = F, Cl, OH). It shows that 100% spin polarization can be induced around Fermi level with spin splitting gap related to the spatial distribution of spin density in real space. Meanwhile, the Nee'l temperature of 2D MnCl and Cr2CF2 remains above room temperature under external electric field up to 0.6 V/angstrom. This study exhibits the potential for application of 2D AFM semiconductors in electric-field-controlled spintronics.

Automated summary

A general strategy is presented to control spin polarization above room temperature in 2D A-type AFM semiconductors by external electric field based on first-principles calculations. Transition metal monohalide MnCl and carbide MXenes Cr2CX2 (X = F, Cl, OH) are used as examples. The results show that 100% spin polarization can be induced around Fermi level, and the spin splitting gap is related to the spatial distribution of spin density in real space. Furthermore, the Néel temperature of 2D MnCl and Cr2CF2 remains above room temperature under external electric field up to 0.6 V/angstrom. This study reveals the potential application of 2D AFM semiconductors in electric-field-controlled spintronics.